Products

Semiconductor Device and Method of Forming WLCSP with

2003122 BGA 60 is electrically and mechanically connected to PCB 52 with a BGA style silicon germanium gallium arsenide indium phosphide or si

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STACKED DIE BGA OR LGA COMPONENT ASSEMBLY

20041220 1 A high density low parasitic stacked die BGA or LGA component assembly g wafers of semiconductor material including silicon and or

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Integrated circuit package including a three dimensional fan

wherein the external contact is part of a ball grid array BGA a land wherein the semiconductor die comprises silicon Si silicon germanium SiGe

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US20110147919A1 Window ball grid array bga

Embodiments of the present disclosure provide window ball grid array semiconductor packages A semiconductor package includes a substrate having i a first surface ii a second surface that is opposite to the first surface and iii an opening formed between the first surface of the substrate and the second surface of the substrate

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A 77 GHz SiGe single chip four channel transceiver module

Jun 01 2012 · Abstract We present for the first time a fully operational 77 GHz silicon germanium SiGe single chip four channel transceiver module with four integrated antennas assembled in an embedded wafer level ball grid array eWLB package This eWLB module has a size of 8 mm × 8 mm and a footprint with a standard ball pitch of 0 5 mm The module includes four half wave dipole

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BGA715L7 °Ù¶ÈÎÄ â

2014113 October 2009 BGA715L7 Silicon Germanium GPS Low Noise Amplifier Small Signal Discretes Edition 2009 10 9 Published by Infineon Technologies

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BGA616 Infineon Technologies AG BGA616 Datasheet

Request Infineon Technologies AG BGA616 online from Elcodis view and download BGA616 pdf datasheet Infineon Technologies AG specifiions

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BGA715N7 Datasheet Inventory amp Price ECIA

infineon technologies silicon germanium low noise amplifier for global navigation satellite systems gnss bga 715n7 e6327

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BGA612

2013115 BGA612 Data sheet BGA612 Nov 2003 BGA 612 Silicon Germanium B r o a d b a n d M M I C A m p li

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MACOM Product Detail MATP10025

MACOM PRISM™ MATP10025 device 100 Gbps PAM4 PHY with integrated DSP and multiplexing functionality The MACOM PRISM™ MATP10025 device is a 100 Gbps PAM4 PHY with integrated DSP and multiplexing functionality designed to enable singlewavelength 100 Gbps optical transceiver solutions MACOM PRISM™ is a highly integrated device offering low latency low power and a small

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germanium Mouser Electronics Inc

germanium are available at Mouser Electronics Mouser offers inventory pricing amp datasheets for germanium

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MACOM Product Detail MAXP37161

16 Channel 28 Gbps Crosspoint Switch amp Signal Conditioners The MAXP37161 is a highly integrated low power fully nonblocking 16 channel 28 Gbps crosspoint switch targeted for 100G Ethernet EDR InfiniBand and OTN appliions It is designed to compensate for signal loss in backplanes and copper cables The switch is equipped with integrated Clock and Data Recovery CDR Adaptive

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bga622 Digi Key

1 Silicon Germanium Wide Band Low Noise Amplifier with 2 kV ESD Protection Figure 1 Pin connection Description The BGA622 is a wide band low noise amplifier based on Infineon Technologies Silicon Germanium Technology B7HF In order to provide the LNA in a small package the out pin is simultaneously used for RF out and On Off switch

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Semiconductor Device and Method of Forming Conductive Ink

BGA 60 is electrically and mechanically connected to PCB 52 with a BGA style silicon germanium gallium arsenide indium phosphide or silicon carbide

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BGA616E6327

20121226 2 1 2008 02 11 cecb2b BGA616 Silicon Germanium Broadband MMIC Amplifier 1 Silicon Germanium Broadband MMIC Amplifier Fe

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Amkor Technology Inc AnySilicon

We also have teams focused on the latest industry developments including packaging options for gallium arsenide and silicon germanium and the emerging markets of photonics MEMS and wafer level fanout packaging Amkor leading the evolution of new packaging technologies

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Chip arrangement and method for manufacturing a chip

silicon germanium gallium nitride gallium arsenide and silicon carbide 302 may include or may be a ball grid array BGA of solder balls

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Semiconductor Device and Method of Forming Recesses in

BGA 60 is electrically and mechanically connected to PCB 52 with a BGA style silicon germanium gallium arsenide indium phosphide or silicon carbide

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Silicium germanium bga bonideecadeau

Silicongermanium Wikipedia Silicon Germaniumoninsulator SGOI is a technology analogous to the SiliconOnInsulator SOI technology currently employed in computer chips SGOI increases the speed of the transistors inside microchips by straining the crystal lattice under the MOS transistor gate resulting in improved electron mobility and

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bga622 DigiKey

BGA622 Silicon Germanium Wide Band Low Noise Amplifier with 2 kV ESD Protection 1 Silicon Germanium Wide Band Low Noise Amplifier with 2 kV ESD Protection Figure 1 Pin connection Description The BGA622 is a wide band low noise amplifier based on Infineon Technologies Silicon Germanium Technology B7HF

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Packaging Technology Amkor Technology

Amkor is now focusing on developing technology such as Through Silicon Via TSV Through Mold Via TMV 174 System in Package SiP copper wirebond copper pillar and improving interconnect with flip chip technology and 3D solutions like stacked die packages We also have teams focused on the latest industry developments including packaging

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Ball grid array BGA encapsulation mold

silicon germanium or gallium arsenide and microscopic circuits are formed BGA pin grid array PGA land grid array LGA or similar set

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BGA619 datasheet High IP3 Low Noise Amplifier

SGA 4586 DC 4000 MHZ Silicon Germanium HBT Cascadable Gain Block Sirenza Microdevices is a high performance SiGe HBT MMIC Amplifier A Darlington configuration featuring 1 micron emitters provides high F T and excellent thermal perfomance The heterojunction increases breakdown voltage and minimizes leakage current between junctions

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A 77GHz SiGe singlechip fourchannel transceiver module

Abstract We present for the first time a fully operational 77GHz silicongermanium SiGe singlechip fourchannel transceiver module with four integrated antennas assembled in an embedded waferlevel ball grid array eWLB package This eWLB module has a size of 8 mm 215 8 mm and a footprint with a standard ball pitch of 0 5 mm The module includes four halfwave dipole antennas that are

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Silicon Germanium GNNS Low Noise Amplifier in ultra small

Silicon Germanium GNNS Low Noise Amplifier in ultra small package with 0 77mm 178 footprint Infineon Technologies AG Frontend low noise amplifier for Global Navigation Satellite Systems GNSS from 1550 MHz to 1615 MHz like GPS Galileo GLONASS and

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Home Lattice Semiconductor

New release of sensAI provides 10X performance boost and expands on Neural Network support design partner and solution ecosystem reference designs and demos helping customers bring Edge AI solutions to market quickly and easily

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The impact of embedded wafer level BGA package on the

In this article we present a study about the impact of embedded wafer level ball grid array eWLB on characteristics of antenna The antenna in package is a promising solution for integration of

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Infineon – BGA855N6 low noise amplifier for lower LBand

Besides GPS L5 and L2 the GNSS LNA also covers Galileo E5a E5b E6 Glonass G3 G2 and Beidou B3 and B2 bands for a frequency range from 1164MHz to 1300MHz The LNA provides 17 8dB gain and 0 6dB noise figure at a current consumption of 4 8mA The BGA855N6 is based upon Infineon Technologies B9HF Silicon Germanium technology

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Semiconductor device and method of forming POP with stacked

BGA 60 is electrically and mechanically connected to PCB 52 with a BGA style silicon germanium gallium arsenide indium phosphide or silicon carbide

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silicon germanium bga ypmaict

Typically the input 3rd Silicon Discretes The BGA622 SiliconGermanium Universal Low Noise Amplifier MMIC in 1800 Introduction The BGA622 is an easytouse versatile and Data Sheet 3 Rev 21 20070706 BGA622 Silicon Germanium Wide BGA 622 Pin connectionvsd Figure 1 Pin connection Description The BGA622 is a

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Semiconductor Device and Method of Forming a Low Profile Dual

BGA 60 is electrically and mechanically connected to PCB 52 with a BGA style silicon germanium gallium arsenide indium phosphide or silicon carbide

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ELECTRONIC ASSEMBLY

silicon Si silicon germanium SiGe germanium Ge gallium arsenide HyperBGA® is also known to support many pixels of the detector crystal

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Semiconductor device and method of forming WLP with

BGA 60 is electrically and mechanically connected to PCB 52 with a BGA style silicon germanium gallium arsenide indium phosphide or silicon carbide

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BGA619

201318 081 Discrete Semiconductors The BGA619 Silicon Germanium High IP3 Low Noise Amplifier in PCS Receiver Applications Features Easy to use LN

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Semiconductor Engineering What s After FinFETs

Ideally a stack would consist of three layers of SiGe and three layers of silicon Then like a finFET flow the next step involves the formation of the shallow trench isolation structure It s critical that the superlattice has ultraabrupt junctions between silicon germanium and silicon Applied s Chudzik said

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Silicon and Transistor Technology Intel 65nm and Beyond

Sep 09 2004 nbsp 0183 32This is less than a modern BGA module can handle but consider the SRAM module can operate several GHz faster than any DRAM module with ease Currently their silicon germanium

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NBSG53A 2 5 V 3 3 V SiGe Selectable Differential Clock

GigaComm family of high performance Silicon Germanium products A strappable control pin is provided to select between the two functions The device is housed in a low profile 4x4 mm 16 pin Flip Chip BGA FCBGA or a 3x3 mm 16 pin QFN package The NBSG53A is a device with data clock OLS reset and select inputs

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Silicon based products and solutions

3 ACTIVE DEVICES 3 1 Photodetectors Germanium is compatible with silicon and A ball grid array BGA interface provides electrical interface significantly

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BGA725L6 datasheet amp applioin notes Datasheet Archive

BGA725L6 datasheet cross reference circuit and appliion notes in pdf format

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1 INTRODUCTION to Multi Chip Modules Swerea

1 INTRODUCTION to Multi Chip Modules This chapter covers the different varieties of multichip modules Chapter 1 1 to 1 7 is an introduction to the subject and is intended for those who want an overview of the technology Part 2 cover each of the substrate technologies in more detail

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Infineon Technologies AG RF Amplifiers Data Sheets

Find Infineon Technologies AG RF Amplifiers Data Sheets on GlobalSpec RF amplifiers are devices that accept a varying input signal and produce an output signal that

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Device and method for forming and attaching an array of

indium silver zinc bismuth antimony gallium germanium silicon and gold nductive balls preferably solder balls to a ball grid array BGA

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BGA622 SiliconGermanium Universal Low Noise Amplifier

BGA622 SiliconGermanium Universal Low Noise Amplifier MMIC Configuration C in 1800 2500 MHz Receiver Appliions he BGA622 is an easytouse versatile and flexible lowcost Low Noise Amplifier LNA MMIC designed for the high linearity and sensitivity requirements of existing and next generation wireless appliions including GMS 900

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BGA612 Fast Delivery IC PHOENIX CO LIMITED

BGA612 Silicon MMICs BGA614 Silicon MMICs BGA615L7 Silicon Germanium GPS Low Noise Amplifier BGA622 SiGe LNA MMIC BGA622GPS GPS Low Noise Amplifier using BGA622 BGA6289 MMIC wideband medium power amplifier BSO094N03S Low Voltage MOSFETscharacteristicsV V 0 V I 1 mADrainsource breakdown voltage 30 V BR DSS GS DGate threshold v

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BGA614 Infineon RF Amplifier Mouser

Infineon BGA614 RF Amplifier are available at Mouser Electronics Mouser offers inventory pricing amp datasheets for Infineon BGA614 RF Amplifier

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Silicon Germanium Products amp Suppliers Engineering360

Silicongermanium alloys are used for lowcost highspeed integrated circuits as well as precision optical components and germanium tetrachloride is an important dopant material in the manufacturing of optical fibers for telecommuniions BGA 7L1N6 Supplier

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Trends in Silicon Photonics for Fiber Optic Communiion

A cross section of a typical silicon waveguide is shown in Figure 3a Modulators can be made by doping the silicon to make pn junctions in the waveguide and changing the depletion width via an applied voltage Figure 3b 2 Photodetectors can be made by growing germanium Ge on top of the silicon Figure 3c 3 Ge is suited for photodetectors

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BGA725L6E6327FTSA1 Infineon datasheet

The LNA provides 20 0 dB gain and 0 65 dB noise figure at a current consumption of 3 6 mA in the appliion configuration described The BGA725L6 is based upon Infineon Technologies B7HF Silicon Germanium technology

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BGA 7L1N6 Datasheet Infineon Technologies AG Low

Low Noise Amplifier LNA ICs BGA 7L1N6 Download Datasheet Get More Info on Supplier s Site Request a Quote Part Saved You have B7HF Silicon Germanium technology RF output internally matched to 50 Ω Only 1 external SMD component necessary 2kV HBM ESD protection including AI

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BGA616

2013115 2 0 0 3 D BGA616 Silicon Germanium Broadband MMIC Amplifier MMIC Secure Mobile Solutions Silicon Discretes N e v e r s t o p t h i n k i n

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Transistor Wikipedia

In 1948 the pointcontact transistor was independently invented by German physicists Herbert Matar 233 and Heinrich Welker while working at the Compagnie des Freins et Signaux a Westinghouse subsidiary loed in Paris Matar 233 had previous experience in developing crystal rectifiers from silicon and germanium in the German radar effort during World War II

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BGA725L6 datasheet 14 16 Pages INFINEON Silicon

BGA725L6Package InformationPreliminary Data Sheet14Revision 2 0 201203094Package InformationFigure 5TSLP62 Package Outline top side and bottom views Figure 6 datasheet search datasheets Datasheet search site for Electronic Components and Semiconductors integrated circuits diodes and other semiconductors

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60 GHz 4TX4TR MIMO Silicon Radar

Our 60 GHz MIMO transceiver with 4 receivers and 4 transmitters is in an advanced stage of development It is intended for systems that also provide angle information The chip is expected to be available in an 8 x 8 mm 178 BGA package and as bare die

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